In the project, we propose a graphene synthesis strategy at 400°C throughout the process via chemical vapor deposition and plasma-assisted fabrication process. By adjusting parameters such as gas flow, growth temperature, and plasma energy, the thickness, quality, and electrical properties of graphene can be precisely controlled. The graphene growth technology on 0.4~10 μm-width copper wires with the 16 nm technology node has been verified. Based on the Raman spectrum measured results, the material on the copper wire is confirmed to be graphene, and the quality of graphene grown under different parameters is analyzed. Additionally, it has been demonstrated that the conductivity of graphene/copper hybrid interconnects is higher than that of pure copper, offering great potential for high-performance circuits in the future.