Developing image and spectrum technologies with Å-scaled resolution for structural and chemical composition analysis.
Constructing surface and interfacial defect analysis techniques with Å-scaled resolution for semiconductor and multilayer structures.
Long-term planning for the requirement of in-line process monitoring.
Key materials for future devices
Developing the growth techniques of high-quality, large-area low-dimensional semiconductors.
Investigating key process modules for low-dimensional semiconductor devices.
Exploring the new functional materials for low-energy devices in industrial applications.
Angstrom-scale device and circuit
Developing ultrahigh density 3D IC technology: Aiming at achieving the performance of 2030 equivalent 1-nm node in integration density and cost of logic and memory circuits, with 32 times improvement to the current technology.
Developing ultralow energy switch devices and ultrahigh energy-efficiency computing architecture: Aiming at achieving the performance of 2030 equivalent 1-nm node, with 50 times and 1000 times improvement to the current technology, respectively.
By setting up challenging goals, this program encourages academia to explore disruptive solutions that differ from the existing technologies. The research outcomes will be transferred to the domestic semiconductor industry in the future to evaluate the feasibility of mass production and reduce the high risk and uncertainty of technological pathfinding.